| PART |
Description |
Maker |
| IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
From old datasheet system
200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| IP2002 IP2002TR |
Synchronous Buck Multiphase Optimized BGA Power Block.
Synchronous Buck Synchronous Buck Integrated Power Semiconductors/ Drivers & Passives
|
International Rectifier
|
| HEF40162 HEF40162B HEF40162BD HEF40162BF HEF40162B |
Hex D-type flip-flop
4-bit synchronous decade counter with synchronous reset
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IDT82P33731 |
Synchronous Equipment Timing Source for 10G-40G Synchronous Ethernet
Composite clock inputs
|
Integrated Device Technology, Inc.
Integrated Circuit Syst...
|
| VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation
Vanguard International Semiconductor, Corp.
|
| 74ACT11160N 74AC11160D 74AC11160N 74ACT11160 74ACT |
SYNCHRONOUS PRESETTABLE SYNCHRONOUS BCD DECADE COUNTER
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IS61LV6464 |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI
|
| IRFH4251DPBF |
Control and Synchronous MOSFETs for synchronous buck converters
|
International Rectifier
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| CD40192BC CD40192BCN CD40193BCM CD40193BCN CD40192 |
Synchronous 4-Bit Up/Down Decade Counter . Synchronous 4-Bit Up/Down Binary Counter
Synchronous Up/Down Counter 同步减计数器
Automotive Catalog Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 125 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDIP16
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
